カルテク、画像センサでキャノン他５社訴える

知財ニュースというかお仕事メモです。現職場に関係あるので。

カリフォルニア工科大、キャノンなど6社をデジカメの特許侵害で提訴

カリフォルニア工科大学（California Institute of Technology）は2008年12月31日、キャノン、ニコン、オリンパス、パナソニック、ソニー、サムスン電子の6社をデジタルカメラの特許侵害で米カリフォルニア州中部地区連邦地方裁判所に提訴した。

争点となるのはカリフォルニア工科大の画素センサーに関する6件の特許（米国特許番号5,990,506、6,456,326、6,549,235、6,555,842、6,570,617、6,744,068）である。

　同大学は、昨年10月にも同じ特許に対する特許侵害で、サムスンを除く5社をテキサス州で訴えている。

具体的には以下の６件

■5,990,506
Fossum , et al. November 23, 1999
"Active pixel sensors with substantially planarized color filtering elements"
Abstract
A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

■6,456,326
Fossum , et al. September 24, 2002
"Single chip camera device having double sampling operation"
Abstract
A single chip camera device is formed on a single substrate including an image acquisition portion for control portion and the timing circuit formed on the substrate. The timing circuit also controls the photoreceptors in a double sampling mode in which are reset level is first read and then after an integration time a charged level is read.

■6,549,235
Fossum , et al. April 15, 2003
"Single substrate camera device with CMOS image sensor"
Abstract
Single substrate device is formed to have an image acquisition device and a controller. The controller on the substrate controls the system operation.

■6,555,842
Fossum , et al. April 29, 2003
"Active pixel sensor with intra-pixel charge transfer"
Abstract
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

■570,617
Fossum , et al. May 27, 2003
"CMOS active pixel sensor type imaging system on a chip"
Abstract
A single chip camera which includes an intergrated image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the intergrated structure reduces the noise that is picked up during imaging.

■6,744,068
Fossum , et al. June 1, 2004
"Active pixel sensor with intra-pixel charge transfer"
Abstract
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.
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アメリカじゃ、大学でも訴訟起こすんですね。当たり前ですけどね。そのために特許たくさん出願するわけですから。

って言ってもアマサイの職場は上記６社じゃないよ。わかってるって？そうですか、そうですか。人気blogランキング・自然科学にぷちっとな。【押す】
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